Consider a situation in which reserve biased current of a particular P-N junction increases when it is exposed to a light of wavelength $\le$ 621 nm. During this process, enhancement in carrier concentration takes place due to generation of hole-electron pairs. The value of band gap is nearly.
Solution
Band gap = ${{hc} \over \lambda } = 2$ eV
About this question
Subject: Physics · Chapter: Electronic Devices · Topic: p-n Junction Diode
This question is part of PrepWiser's free JEE Main question bank. 52 more solved questions on Electronic Devices are available — start with the harder ones if your accuracy is >70%.